doping density

The results show that they are different from the conventional PTCR ceramic materials in the following aspects: The effect of Sb doping density on resistance temperature characteristics of the ceramics materials is high;

结果表明：微量元素Sb的掺杂量对线性电阻温度特性影响较大；

It also manifests that the degradation is different for the device with different channel doping density.

沟道杂质浓度不同,界面态引起的器件特性的退化则不同.

Influence of Doping Density on Hot-carrier-effect in Grooved Gate PMOSFET

杂质浓度对槽栅PMOSFET抗热载流子特性的影响

The effect of different doping density and different testing temperature on the impedance spectrum is studied based on the simulation equivalent circuit within the electrolytic film of CeO2 base.

根据CeO2基电解质薄膜的内部模拟等效电路，研究了不同掺杂浓度及不同测试温度对阻抗谱的影响。

The experimental results show that pulse width decreases with the increasing of quartz powder doping density and liquid depth.

实验结果表明，产生KrF短脉冲的宽度随酒精中掺杂石英粉末浓度、酒精悬浊液厚度、增加而减小。

The research results indicate that with the increase of doping density in channel, the hot carrier effect immunity becomes better.

研究发现，随着沟道杂质浓度的提高，器件的抗热载流子能力增强；

For the grooved gate PMOSFET, the study results prove that with the increase of channel doping density, the threshold voltage increases, the drain current driving ability decreases, and the hot carrier effect is suppressed, as in the planar device.

研究发现，随着沟道掺杂浓度的提高，与平面器件相同，槽栅器件的阈值电压提高，漏极驱动能力降低，抗热载流子效应增强；